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www.irf.com 1 09/21/04 IRF7465PBF smps mosfet hexfet power mosfet parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v 1.9 i d @ t a = 70c continuous drain current, v gs @ 10v 1.5 a i dm pulsed drain current 15 p d @t a = 25c power dissipation 2.5 w linear derating factor 0.02 w/c v gs gate-to-source voltage 30 v dv/dt peak diode recovery dv/dt 7.8 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings notes through are on page 8 so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a v dss r ds(on) max i d 150v 0.28 @v gs = 10v 1.9a symbol parameter typ. max. units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 c/w thermal resistance high frequency dc-dc converters lead-free benefits applications low gate to drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design (see app. note an1001) fully characterized avalanche voltage and current
IRF7465PBF 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 0.75 ??? ??? s v ds = 50v, i d = 1.14a q g total gate charge ??? 10 15 i d = 1.14a q gs gate-to-source charge ??? 2.7 4.0 nc v ds = 120v q gd gate-to-drain ("miller") charge ??? 5.0 7.5 v gs = 10v t d(on) turn-on delay time ??? 7.0 ??? v dd = 75v t r rise time ??? 1.2 ??? i d = 1.14a t d(off) turn-off delay time ??? 10 ??? r g = 6.0 ? t f fall time ??? 9.0 ??? v gs = 10v c iss input capacitance ??? 330 ??? v gs = 0v c oss output capacitance ??? 80 ??? v ds = 25v c rss reverse transfer capacitance ??? 16 ??? pf ? = 1.0mhz c oss output capacitance ??? 420 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 41 ??? v gs = 0v, v ds = 120v, ? = 1.0mhz c oss eff. effective output capacitance ??? 76 ??? v gs = 0v, v ds = 0v to 120v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 40 mj i ar avalanche current ??? 1.9 a avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 1.14a, v gs = 0v t rr reverse recovery time ??? 62 93 ns t j = 25c, i f = 1.14a q rr reverse recoverycharge ??? 160 240 nc di/dt = 100a/s diode characteristics 2.3 15 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 150 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.19 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.28 ? v gs = 10v, i d = 1.14a v gs(th) gate threshold voltage 3.0 ??? 5.5 v v ds = v gs , i d = 250a ??? ??? 25 a v ds = 150v, v gs = 0v ??? ??? 250 v ds = 120v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v i gss i dss drain-to-source leakage current
IRF7465PBF www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 6.0 7.0 8.0 9.0 10.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 150 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 1.9a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 6.0v 2 0 s pulse width tj = 25c vgs top 15v 12v 10v 8.0v 7.5v 7.0v 6.5v bottom 6.0v 0.1 1 10 100 v ds , dr ain- to- source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 6.0v 20s pulse w idth tj = 150c vgs top 15v 12v 10v 8.0v 7.5v 7.0v 6.5v bo t t om 6. 0v
IRF7465PBF 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 4 8 12 16 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 1.14a v = 30v ds v = 75v ds v = 120v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c t j = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
IRF7465PBF www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 9. maximum drain current vs. ambient temperature 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 t , case temperature ( c) i , drain current (a) c d
IRF7465PBF 6 www.irf.com fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 0 4 8 12 16 i d , drain current (a) 0.20 0.24 0.28 0.32 0.36 0.40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 10v 6 8 10 12 14 16 v gs, gate -to -source voltage (v) 0.20 0.25 0.30 0.35 0.40 0.45 0.50 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 1.14a 25 50 75 100 125 150 0 20 40 60 80 100 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 0.8a 1.5a 1.9a
IRF7465PBF www.irf.com 7 so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rolling dimens ion: millimet er 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070 ] dat e code (yww) xxxx international rectifier logo f7101 y = last digit of the year part number lot code ww = we e k example: t his is an irf 7101 (mos fet ) p = de s i gnat e s l e ad- f r e e product (optional) a = assembly site code
IRF7465PBF 8 www.irf.com
repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 22mh r g = 25 ? , i as = 1.9a. pulse width 400s; duty cycle 2%. when mounted on 1 inch square copper board 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) n otes: 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters(inches). 3 . outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/04

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